| PART |
Description |
Maker |
| Q62705-K274 KPY33-RK |
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23- |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
PNP TRANSISTORS FOR AF INPUT STAGES
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 251UL80S20 251UL 251UL100S10 251UL100S15 251UL100S |
2000V Fast Recovery Diode in a DO-205AB (DO-9) package 2000V快恢复二极管中的DO - 205AB（请 9）封
1600V Fast Recovery Diode in a DO-205AB (DO-9) package 1600V快恢复二极管中的DO - 205AB（请 9）封
2500V Fast Recovery Diode in a DO-205AB (DO-9) package
1000V Fast Recovery Diode in a DO-205AB (DO-9) package
1200V Fast Recovery Diode in a DO-205AB (DO-9) package
1800V Fast Recovery Diode in a DO-205AB (DO-9) package
1400V Fast Recovery Diode in a DO-205AB (DO-9) package
250 AMP Fast Recovery Power Silicon Rectifiers
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 250安培快速恢复电力硅整流
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 250安培快速恢复电力硅整流
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 250安培快速恢复电力硅整流
|
OlympicControls, Corp.
Cree, Inc.
IRF[International Rectifier]
http://
International Rectifier, Corp.
|
| KBPC1502WN KBPC1501WN KBPC1505WN KBPC1505WN1 KBPC1 |
High forward surge current capability
|
Shenzhen Ping Sheng Electronics Co., Ltd.
|
| SL74HC123N SL74HC123D SL74HC123 HC123 |
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1000V; Forward Current Avg Rectified, IF(AV):2A; Non Repetitive Forward Surge Current Max, Ifsm:70A; Forward Voltage Max, VF:1.1V; Package/Case:DO-15 双Retriggerable单稳态触发器
Dual Retriggerable Monostable Multivibrator
|
System Logic Semiconductor Co., Ltd.
SLS[System Logic Semiconductor]
|
| KCQ20A04 |
Similar to TO-247C(TO-3P)Case, Low Forward Voltage Drop, High Surge Current Capability
|
NIEC[Nihon Inter Electronics Corporation]
|
| 1KSMBJ11A 1KSMBJ9.1A 1KSMBJ51A 1KSMBJ91A 1KSMBJ24A |
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:600V; Forward Current Avg Rectified, IF(AV):1A; Non Repetitive Forward Surge Current Max, Ifsm:30A; Forward Voltage Max, VF:1.1V; Package/Case:DO-41
Silicon Avalanche Diodes - 1000W Surface Mount Transient Voltage Suppressor 硅雪崩二极管- 1000瓦表面贴装瞬态电压抑制器
|
Littelfuse, Inc.
|
| KBU6M |
High forward surge current capability
|
Mospec Semiconductor
|
| GBJ30B GBJ30G |
Low forward voltage, high forward current
|
GeneSiC Semiconductor, ...
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
